| 型号 | 制造商 | 描述 | 价格 | 封装 | 批号 | 数量 |
|
1N5817-T
|
Diodes Inc. | Schottky Rectifier, Single, 20V, Do-41; Repetitive Reverse Voltage Vrrm Max:20V; Forward Current If(Av):1A; Diode Configuration:single; Diode Case | 0.0000 | 1115+ | 14954 | |
|
1N5711-1
|
Microchip | Schottky Barrier Diode - Qualified per MIL-PRF-19500/44 | 0.0000 | 1115+ | 149 | |
|
1SS396,LF
|
Toshiba | Rectifier Diode Small Signal Schottky 45V 0.1A 3-Pin S-Mini T/R | 0.0000 | 1115+ | 46880 | |
|
1SS393,LF
|
Toshiba | Diode Small Signal Schottky 45V 0.3A 3-Pin USM T/R | 0.0000 | 1115+ | 58820 | |
|
1SS392,LF
|
Toshiba | Rectifier Diode Small Signal Schottky Si 45V 0.1A 3-Pin S-Mini T/R | 0.0000 | 1115+ | 316880 | |
|
1SS294,LF
|
Toshiba | Rectifier Diode Small Signal Schottky Si 45V 0.3A Automotive 3-Pin S-Mini T/R | 0.0000 | 1115+ | 1681 | |
|
1N6660DT1
|
Microchip | Diode Schottky 45V 15A 3-Pin TO-254AA Tray | 0.0000 | 1115+ | 226800 | |
|
1N5822-TP
|
Micro Commercial Co | DIODE SCHOTTKY 40V 3A DO201AD | 0.0000 | 1115+ | 500 | |
|
1N5821-TP
|
Micro Commercial Co | DIODE SCHOTTKY 30V 3A DO201AD | 0.0000 | 1115+ | 16880 | |
|
1N5820-TP
|
Micro Commercial Co | Diode Schottky 20V 3A 2-Pin DO-201AD T/R | 0.0000 | 1115+ | 500 | |
|
1N5818-TP
|
Micro Commercial Co | DIODE SCHOTTKY 30V 1A DO41 | 0.0000 | 1115+ | 500 | |
|
1N5817-TP
|
Micro Commercial Co | DIODE SCHOTTKY 20V 1A DO41 | 0.0000 | 1115+ | 500 | |
|
1N5822RLG
|
onsemi | Diode, Schottky Barrier, Vr 40V, If 3A, Pkg DO-201AD, Vf 0.525V, Tj +125degc, Cs 80A | 0.0000 | 1115+ | 18325 | |
|
1N5821RLG
|
onsemi | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD | 0.0000 | 1115+ | 11447 | |
|
1N5820RLG
|
onsemi | DIODE, SCHOTTKY, 3A, 20V, AXIAL; Diode Type:Schottky; Repetitive Reverse Voltage Vrrm Max:20V; Forward Current If(AV):3A; Forward Voltage VF Max | 0.0000 | 1115+ | 63823 | |
|
1N5819RLG
|
onsemi | Rectifier Diode Schottky Si 40V 1A 2-Pin DO-41 T/R / DIODE SCHOTTKY 40V 1A AXIAL | 0.0000 | 1115+ | 18152 | |
|
1N5819-TP
|
Micro Commercial Co | 1N5819 Series 1 A 40 V Through-Hole Schottky Barrier Rectifier - DO-41 | 0.0000 | 1115+ | 13088 | |
|
1N5818RLG
|
ON Semiconductor | DIODE SCHOTTKY 30V 1A AXIAL | 0.0000 | 1115+ | 10337 | |
|
1N5817RLG
|
onsemi | Voltage:450mV; Junction Temperature Tj Max:125°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +125°C; Semiconductor Technology:Si; Termination Type:Axial Leaded | 0.0000 | 1115+ | 11775 | |
|
1SS417,L3M
|
Toshiba | Diode Schottky 40V 100MA Fsc | 0.0000 | 1115+ | 160880 |
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